NE3515S02-T1C-A - CEL View larger

NE3515S02-T1C-A - CEL

CEL

NE3515S02-T1C-A


Transistors RF JFET Super Low Noise Pseudomorphic

$ 3.27

1342 1342 Items In Stock

Specification of NE3515S02-T1C-A

Brand CEL
Transistor Type pHEMT
Maximum Operating Temperature + 125 C
Frequency 12 GHz
Manufacturer Part No. NE3515S02-T1C-A
Technology GaAs
Forward Transconductance - Min 70 mS
Mounting Style SMD/SMT
Gain 12.5 dB
Alternate Part No. 551-NE3515S02-T1C-A
Noise Figure 0.3 dB
Manufacturer CEL
Id - Continuous Drain Current 88 mA
P1dB 14 dBm
Vds - Drain-Source Breakdown Voltage 4 V
Product Category Transistors RF JFET
Vgs - Gate-Source Breakdown Voltage - 3 V
Package/Case S0-2
Packaging Reel
Pd - Power Dissipation 165 mW